PART |
Description |
Maker |
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
KM44C256C KM44C256C-6 KM44C256C-7 KM44C256C-8 KM44 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronics Samsung semiconductor
|
102100-1 |
.156 Inch Centerline-Cable to Board AMPMODU .031 x .062 Interconnection System (Mod I); MOD I RECP PLTD 15 SEL ( AMP )
|
Tyco Electronics
|
KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics Samsung Semiconductor Co., Ltd.
|
AT28C64BNBSP AT28C64B-15PI AT28C64B-20PI AT28C64B- |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28 Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-VQFN -40 to 85 8K X 8 EEPROM 5V, 150 ns, PDSO28 64K 8K x 8 CMOS E2PROM 8-Bit Shift Registers With Output Registers 16-SSOP -40 to 85 64K EEPROM with 64-Byte Page & Software Data Protection 64K (8K x 8) CMOS E2PROM with Page Write and Software Data Protection From old datasheet system 64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
|
MB81116822A-84 MB81116822A-125 |
CMOS 2×1M ×8 BIT
Hyper Page Mode Dynamic RAM(CMOS 2×1M ×8位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
MB8502E064AB-70 MB8502E064AB-60 |
CMOS 2M×64 BIT
Hyper Page Mode DRAM Module(CMOS 2M×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
MB81V17800A-60L |
CMOS 2 M ×8 BIT Fast Page Mode DRAM(CMOS 2 M ×8 位快速页面存取模式动态RAM) 的CMOS 2米8位快速页面模式的DRAM的CMOS2米8位快速页面存取模式动态内存)
|
Fujitsu, Ltd.
|
V53C16129H V53C16129HK60 |
High performance 128K x 16 EDO page mode CMOS dynamic RAM HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic Corp] Mosel Vitelic, Corp
|
KM41C4000DLJ-6 KM41V4000DLJ-6 KM41V4000DLJ-7 KM41C |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns 4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns 4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns 4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns
|
Samsung Electronic
|
AS4C4M4F1Q AS4C4M4FOQ |
5V 4M×4 CMOS QuadCAS DRAM (Fast Page Mode)(5V 4M×4 CMOS QuadCAS 动态RAM(快速页面模式))
|
Alliance Semiconductor Corporation
|